This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SB1462J
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SD2216J
1.00±0.05
Unit: mm
0.80±0.05
1.60+0.05
–0.03
0.12+0.03
–0.01
1
• High forward current transfer ratio hFE
• SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
(0.375)
1.60±0.05
5˚
2
0.27±0.02
0 to 0.02
5˚
0.70+0.05
–0.03
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■ Features
0.85+0.05
–0.03
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■ Absolute Maximum Ratings Ta = 25°C
Symbol
Rating
Unit
VCBO
−60
V
Collector-emitter voltage (Base open)
VCEO
−50
V
Emitter-base voltage (Collector open)
VEBO
−7
V
Collector current
IC
−100
mA
Peak collector current
ICP
−200
mA
Collector power dissipation
PC
125
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
0.10 max.
Parameter
Collector-base voltage (Emitter open)
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
SSMini3-F1 Package
Marking Symbol: A
Symbol
Collector-base voltage (Emitter open)
VCBO
IC = −10 µA, IE = 0
−60
V
VCEO
IC = −100 µA, IB = 0
−50
V
Emitter-base voltage (Collector open)
VEBO
IE = −10 µA, IC = 0
−7
Collector-base cutoff current (Emitter open)
ICBO
VCB = −20 V, IE = 0
Collector-emitter cutoff current (Base open)
ICEO
VCE = −10 V, IE = 0
Forward current transfer ratio
hFE
VCE = −10 V, IC = −2 mA
te
na
nc
e/
on
tin
Collector-emitter voltage (Base open)
ue
Parameter
Di
sc
■ Electrical Characteristics Ta = 25°C ± 3°C
Collector-emitter saturation voltage
*1
M
ain
Transition frequency
Collector output capacitance
(Common base, input open circuited)
VCE(sat)
fT
Cob
Conditions
IC = −100 mA, IB = −10 mA
Min
Typ
160
− 0.3
Max
Unit
V
− 0.1
µA
−100
µA
460
− 0.5
V
VCB = −10 V, IE = 1 mA, f = 200 MHz
80
MHz
VCB = −10 V, IE = 0, f = 1 MHz
2.7
pF
Pl
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: June 2007
SJC00087CED
1
