R5007ANJ
Nch 500V 7A Power MOSFET
Datasheet
l Outline
LPT(S)
VDSS
500V
RDS(on)(Max.)
1.05Ω
ID
±7A
SC-83
PD
40W
TO-263
l Inner circuit
l Features
1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed
to be ±30V.
4) Drive circuits can be simple.
5) Parallel use is easy.
6) Pb-free lead plating ; RoHS compliant
l Packaging specifications
Embossed
Tape
Packing
l Application
Type
Switching Power Supply
Reel size (mm)
Tape width (mm)
Basic ordering unit (pcs)
Taping code
Marking
330
24
1000
TL
R5007ANJ
l Absolute maximum ratings (Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Symbol
VDSS
ID*1
ID*1
ID,pulse*2
VGSS
EAS*3
EAR*4
IAR*3
PD
Tj
Tstg
TC = 25°C
TC = 100°C
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current
Power dissipation (Tc = 25°C)
Junction temperature
Range of storage temperature
Reverse diode dv/dt
dv/dt
Value
500
±7
±3.4
±28
±30
3.5
2.8
3.5
40
150
-55 to +150
15
Unit
V
A
A
A
V
mJ
mJ
A
W
℃
℃
V/ns
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