Features
• Single Voltage Read/Write Operation: 2.65V to 3.6V
• Fast Read Access Time – 70 ns
• Sector Erase Architecture
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– Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout
– Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
Fast Word Program Time – 10 µs
Fast Sector Erase Time – 100 ms
Suspend/Resume Feature for Erase and Program
– Supports Reading and Programming from Any Sector by Suspending Erase
of a Different Sector
– Supports Reading Any Byte/Word in the Non-suspending Sectors by Suspending
Programming of Any Other Byte/Word
Low-power Operation
– 10 mA Active
– 15 µA Standby
Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
RESET Input for Device Initialization
Sector Lockdown Support
TSOP and CBGA Package Options
Top or Bottom Boot Block Configuration Available
128-bit Protection Register
Minimum 100,000 Erase Cycles
Common Flash Interface (CFI)
Green (Pb/Halide-free) Packaging
1. Description
16-megabit
(1M x 16/2M x 8)
3-volt Only
Flash Memory
AT49BV163D
AT49BV163DT
Not Recommended
for New Design
Contact Atmel to discuss
the latest design in trends
and options
The AT49BV163D(T) is a 2.7-volt 16-megabit Flash memory organized as 1,048,576
words of 16 bits each or 2,097,152 bytes of 8 bits each. The x16 data appears on I/O0
- I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided into 39 sectors for
erase operations. The device is offered in a 48-lead TSOP and a 48-ball CBGA package. The device has CE and OE control signals to avoid any bus contention. This
device can be read or reprogrammed using a single power supply, making it ideally
suited for in-system programming.
The device powers on in the read mode. Command sequences are used to place the
device in other operation modes such as program and erase. The device has the
capability to protect the data in any sector (see “Sector Lockdown” on page 5).
To increase the flexibility of the device, it contains an Erase Suspend and Program
Suspend feature. This feature will put the erase or program on hold for any amount of
time and let the user read data from or program data to any of the remaining sectors
within the memory. The end of a program or an erase cycle is detected by the
READY/BUSY pin, Data Polling or by the toggle bit.
A six-byte command (Enter Single Pulse Program Mode) sequence to remove
the requirement of entering the three-byte program sequence is offered to further
improve programming time. After entering the six-byte code, only single pulses on the
write control lines are required for writing into the device. This mode (Single
Pulse Byte/Word Program) is exited by powering down the device, or by pulsing
the RESET pin low for a minimum of 500 ns and then bringing it back to VCC. Erase,
3590A–FLASH–12/05
