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TLP705F
TLP705F TOSHIBA Photocoupler GaAℓAs IRED + Photo IC TLP705F Unit: mm 4.58±0.25 6 5 4 1.27±0.2 +0.25 3.9 −0.15 7.62±0.25 −0.05 1 2 3 0.25± +0.10 TLP705F consists of a GaAℓAs light emitting diode and an integrated photodetector. This unit is 6-lead SDIP package. TLP705F is 50% smaller than 8PIN DIP and has suited the safety standard reinforced insulation class. So, mounting area in safety standard required equipment can be reduced. TLP705F is suitable for gate driving circuit of IGBT or power MOS FET. Especially TLP705F is capable of “direct” gate drive of lower Power IGBTs. Absolute Maximum ratings and electrical characteristics are the same as The TLP705 technical data sheets. +0.15 3.65 −0.25 6.8±0.25 Plasma Display Panel Industrial Inverter IGBT/Power MOSFET Gate Drive 0.75±0.25 11.7±0.3 0.4±0.1 11-5J101 TOSHIBA 11-5J101 Weight: 0.26 g (typ.) • Peak output current : ±0.45 A (max) • Operating frequency : 250 kHz (max) • Guaranteed performance over temperature: −40 to 100°C • Supply current : 3mA (max) • Power supply voltage : 10 to 20 V • Threshold input current : IFLH = 8 mA (max) • Switching time (tpLH / tpHL) : 200 ns (max) • Common mode transient immunity : ±10 kV/μs (min) • Isolation voltage : 5000 Vrms (min) • UL Recognized : UL1577, File No.E67349 • Construction Mechanical Rating Creepage Distance Clearance Insulation Thickness • Pin Configuration (top view) 1 2 5 3 8.0 mm (min) 8.0 mm (min) 0.4 mm (min) 1: Anode 2: NC 3: Cathode 4: GND 5: VO (output) 6: VCC 6 4 SHIELD Schematic Option (D4) TÜV approved : EN60747-5-2 Certificate No. R50033433 Maximum operating insulation voltage: 1140 Vpk Highest permissible over voltage : 8000 Vpk ICC 6 (Tr1) IF 1+ VF 3− Truth Table Input LED Tr1 Tr2 Output H ON ON OFF H L OFF OFF ON L VCC (Tr2) SHIELD IO 5 VO 4 GND A 0.1 μF bypass capacitor must be connected between pin 6 and 4. (See Note 6) Start of commercial production 2004/04 1 2014-09-22
TOSHIBA
株式会社 東芝セミコンダクター＆ストレージ社
日本
半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI
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