SEMICONDUCTOR
KTC3911S
TECHNICAL DATA
EPITAXIAL PLANAR NPN TRANSISTOR
LOW NOISE AMPLIFIER APPLICATION.
FEATURES
E
B
L
・High Voltage : VCEO=120V.
L
・Excellent hFE Linearity
D
: hFE(0.1mA)/hFE(2mA)=0.95(Typ.).
2
H
A
3
G
・High hFE: hFE=200～700.
・Low Noise : NF=1dB(Typ.), 10dB(Max.).
1
・Complementary to KTA1517S.
Q
J
K
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
P
N
C
P
SYMBOL
RATING
VCBO
120
V
Collector-Emitter Voltage
VCEO
120
V
Emitter-Base Voltage
VEBO
5
IC
100
mA
Base Current
IB
20
mA
Collector Power Dissipation
PC
150
mW
Junction Temperature
Tj
150
℃
Tstg
-55～150
M
V
Collector Current
MILLIMETERS
_
2.93 + 0.20
1.30+0.20/-0.15
1.30 MAX
0.40+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
0.1 MAX
UNIT
Collector-Base Voltage
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
Q
℃
Storage Temperature Range
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
Marking
h FE Rank
Type Name
Lot No.
AD
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB=120V, IE=0
-
-
0.1
μ
A
Emitter Cut-off Current
IEBO
VEB=5V, IC=0
-
-
0.1
μ
A
hFE (Note)
Collector-Emitter Saturation Voltage
Transition Frequency
VCE=6V, IC=2mA
200
-
700
VCE(sat)
IC=10mA, IB=1mA
-
-
0.3
V
fT
DC Current Gain
VCE=6V, IC=1mA
-
100
-
MHz
VCB=10V, IE=0, f=1MHz
-
4.0
-
pF
-
1.0
10
dB
Collector Output Capacitance
Cob
Noise Figure
NF
VCE=6V, IC=0.1mA
f=1kHz, Rg=10kΩ
Note : hFE Classification
2001. 2. 24
GR(G):200～400 BL(L):350～700
Revision No : 3
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