2SC3324
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT process)
2SC3324
Audio Frequency Low Noise Amplifier Applications
•
High voltage: VCEO = 120 V
•
Unit: mm
Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)
= 0.95 (typ.)
•
High hFE: hFE = 200~700
•
Low noise: NF (2) = 0.2dB (typ.), 3dB (max)
•
Complementary to 2SA1312
•
Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
120
V
Collector-emitter voltage
VCEO
120
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
100
mA
Base current
IB
20
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
125
Tstg
−55~125
Storage temperature range
JEDEC
TO-236MOD
JEITA
SC-59
°C
TOSHIBA
2-3F1A
°C
Weight: 0.012 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
1
2007-11-01
