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2SK1825-TPE4
2SK1825 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1825 High Speed Switching Applications Analog Switch Applications • 4 V gate drive • Low threshold voltage: Vth = 0.8~2.5 V • High speed • Enhancement-mode • Unit: mm Small package Equivalent Circuit JEDEC JEITA Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDS 50 VGSS 10 50 PD 300 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 2-4E1E mA Drain power dissipation TOSHIBA V ID ― V Gate-source voltage ― °C DC drain current Weight: 0.13 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note: This transistor is electrostatic sensitive device. Please handle with caution. 1 2007-11-01
TOSHIBA
株式会社 東芝セミコンダクター＆ストレージ社
日本
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