ISSI
IS61LV5128AL
®
512K x 8 HIGH-SPEED CMOS STATIC RAM
APRIL 2005
FEATURES
• High-speed access times:
10, 12 ns
• High-performance, low-power CMOS process
• Multiple center power and ground pins for
greater noise immunity
• Easy memory expansion with CE and OE
options
• CE power-down
• Fully static operation: no clock or refresh
required
• TTL compatible inputs and outputs
• Single 3.3V power supply
• Packages available:
– 36-pin 400-mil SOJ
– 36-pin miniBGA
– 44-pin TSOP (Type II)
• Lead-free available
DESCRIPTION
The ISSI IS61LV5128AL is a very high-speed, low power,
524,288-word by 8-bit CMOS static RAM. The
IS61LV5128AL is fabricated using ISSI's high-performance CMOS technology. This highly reliable process
coupled with innovative circuit design techniques, yields
higher performance and low power consumption devices.
When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down to 250 µW (typical) with CMOS input levels.
The IS61LV5128AL operates from a single 3.3V power
supply and all inputs are TTL-compatible.
The IS61LV5128AL is available in 36-pin 400-mil SOJ, 36pin mini BGA, and 44-pin TSOP (Type II) packages.
FUNCTIONAL BLOCK DIAGRAM
DECODER
512K X 8
MEMORY ARRAY
I/O
DATA
CIRCUIT
A0-A18
COLUMN I/O
VDD
GND
I/O0-I/O7
CE
OE
CONTROL
CIRCUIT
WE
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. C
04/15/05
1
ISSI
IS61LV5128AL
®
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
VTERM
TSTG
PT
Parameter
Terminal Voltage with Respect to GND
Storage Temperature
Power Dissipation
Value
–0.5 to VDD + 0.5
–65 to +150
1.0
Unit
V
°C
W
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
OPERATING RANGE
VDD
Range
Ambient Temperature
10ns
12ns
0°C to +70°C
3.3V +10%, -5%
3.3V +10%
-40°C to +85°C
3.3V +10%, -5%
3.3V +10%
Commercial
Industrial
CAPACITANCE(1,2)
Symbol
Parameter
CIN
Input Capacitance
CI/O
Input/Output Capacitance
Conditions
Max.
Unit
VIN = 0V
6
pF
VOUT = 0V
8
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz, VDD = 3.3V.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. C
04/15/05
3
