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1SS294
Certificate TH97/10561QM 1SS294 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE SOT-23 PRV : 45 Volts Io : 100 mA 0.100 0.013 1.40 0.95 0.50 0.35 Small surface mounting type Low forward voltage Low reverse current Pb / RoHS Free 3 1 2 1.65 1.20 3.0 2.2 3.10 2.70 0.19 0.08 FEATURES : * * * * Certificate TW00/17276EM 1.02 0.89 2.04 1.78 3 MECHANICAL DATA : * Case : SOT-23 plastic Case * Marking Code : " XM " 1 2 Dimensions in millimeters MAXIMUM RATINGS AND THERMAL CHARACTERISTICS (Ta =25 °C) Symbol Value Unit Maximum Peak Reverse Voltage VRM 45 V Reverse Voltage VR 40 V Maximum Peak Forward Current IFM 300 mA IF(AV) 100 mA Power Dissipation PD 150 mW Junction Temperature TJ 125 °C TSTG -55 to +125 °C Parameter Average Forward Current Storage Temperature Range ELECTRICAL CHARACTERISTICS Parameter (Ta =25 °C) Test Condition Symbol Min. Max. Unit Forward Voltage IF = 100 mA VF - 0.6 V Reverse Current VR = 40 V IR - 5 µA Total Capacitance VR = 0 V, f = 1 MHz CT - 25 pF Page 1 of 2 Rev. 00 : February 6, 2007
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