2SC3405
TOSHIBA Transistor
Silicon NPN Triple Diffused Type
2SC3405
Industrial Applications
Switching Regulator and High Voltage Switching
Applications
High Speed DC-DC Converter Applications
•
Unit: mm
Excellent switching times: tr = 1.0 μs (max)
tf = 1.0 μs (max), (IC = 0.3 A)
•
High collector breakdown voltage: VCEO = 800 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
900
V
Collector-emitter voltage
VCEO
800
V
Emitter-base voltage
VEBO
8
V
DC
IC
0.8
Pulse
ICP
1.5
IB
0.2
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
PC
1.0
20
A
A
Tj
150
°C
Tstg
−55 to 150
°C
JEDEC
―
JEITA
W
―
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2010-02-05
