Pre-Production
FM25H20
2Mb Serial 3V F-RAM Memory
Features
2M bit Ferroelectric Nonvolatile RAM
• Organized as 256K x 8 bits
• High Endurance 100 Trillion (1014) Read/Writes
• 10 Year Data Retention
• NoDelay™ Writes
• Advanced High-Reliability Ferroelectric Process
Write Protection Scheme
• Hardware Protection
• Software Protection
Low Power Consumption
• Low Voltage Operation 2.7V – 3.6V
• Sleep Mode Current 3 μA (typ.)
Very Fast Serial Peripheral Interface - SPI
• Up to 40 MHz Frequency
• Direct Hardware Replacement for Serial Flash
• SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)
Industry Standard Configurations
• Industrial Temperature -40°C to +85°C
• 8-pin “Green”/RoHS TDFN Package
• 8- pin “Green”/RoHS EIAJ SOIC Package
Description
Pin Configuration
The FM25H20 is a 2-megabit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or F-RAM is
nonvolatile and performs reads and writes like a
RAM. It provides reliable data retention for 10 years
while eliminating the complexities, overhead, and
system level reliability problems caused by Serial
Flash and other nonvolatile memories.
Unlike Serial Flash, the FM25H20 performs write
operations at bus speed. No write delays are incurred.
Data is written to the memory array immediately
after it has been transferred to the device. The next
bus cycle may commence without the need for data
polling. The product offers virtually unlimited write
endurance, orders of magnitude more endurance than
Serial Flash. Also, F-RAM exhibits lower power
consumption than Serial Flash.
These capabilities make the FM25H20 ideal for
nonvolatile memory applications requiring frequent
or rapid writes or low power operation. Examples
range from data collection, where the number of
write cycles may be critical, to demanding industrial
controls where the long write time of Serial Flash can
cause data loss.
The FM25H20 provides substantial benefits to users
of Serial Flash as a hardware drop-in replacement.
The FM25H20 uses the high-speed SPI bus, which
enhances the high-speed write capability of F-RAM
technology. Device specifications are guaranteed
over an industrial temperature range of -40°C to
+85°C.
This is a product in the pre-production phase of development. Device
characterization is complete and Ramtron does not expect to change the
specifications. Ramtron will issue a Product Change Notice if any
specification changes are made.
Rev. 2.2
Sept. 2010
Top View
/S
1
8
VDD
Q
2
7
/HOLD
/W
3
6
C
VSS
4
5
D
S
1
8
VDD
Q
2
7
HOLD
W
3
6
C
VSS
4
5
D
Pinout is equivalent to other SPI F-RAM devices.
Pin Name
/S
/W
/HOLD
C
D
Q
VDD
VSS
Function
Chip Select
Write Protect
Hold
Serial Clock
Serial Data Input
Serial Data Output
Supply Voltage (2.7 to 3.6V)
Ground
Ordering Information
FM25H20-DG
8-pin “Green”/RoHS TDFN
FM25H20-DGTR
8-pin “Green”/RoHS TDFN,
Tape & Reel
FM25H20-G
8-pin “Green”/RoHS EIAJ SOIC
FM25H20-GTR
8-pin “Green”/RoHS EIAJ
SOIC, Tape & Reel
Ramtron International Corporation
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-FRAM, (719) 481-7000
http://www.ramtron.com
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