PD - 14275D
IRFB4310PbF
IRFS4310PbF
IRFSL4310PbF
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
HEXFET® Power MOSFET
D
G
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
S
VDSS
RDS(on) typ.
max.
ID
S
D
G
S
D
G
S
D
G
D2Pak
IRFS4310PbF
TO-220AB
IRFB4310PbF
100V
5.6m:
7.0m:
130A
TO-262
IRFSL4310PbF
Absolute Maximum Ratings
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
130
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
92
IDM
Pulsed Drain Current
550
PD @TC = 25°C
Maximum Power Dissipation
d
A
300
W
W/°C
V
Linear Derating Factor
2.0
VGS
Gate-to-Source Voltage
± 20
dV/dt
TJ
Peak Diode Recovery
14
Operating Junction and
TSTG
Storage Temperature Range
f
-55 to + 175
300
Soldering Temperature, for 10 seconds
(1.6mm from case)
x
Avalanche Characteristics
EAS (Thermally limited)
Single Pulse Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
x
10lb in (1.1N m)
Mounting torque, 6-32 or M3 screw
Ã
V/ns
°C
e
980
g
mJ
See Fig. 14, 15, 22a, 22b,
A
mJ
Thermal Resistance
Symbol
Parameter
Typ.
Max.
–––
0.50
Case-to-Sink, Flat Greased Surface , TO-220
0.50
–––
Junction-to-Ambient, TO-220
–––
62
–––
40
RθJC
Junction-to-Case
RθCS
RθJA
RθJA
www.irf.com
k
k
2
Junction-to-Ambient (PCB Mount) , D Pak
jk
Units
°C/W
1
01/31/06
