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部品型式

AT45DB011D-SH-B

製品説明
仕様・特性

Features • Single 2.7V to 3.6V Supply • RapidS Serial Interface: 66 MHz Maximum Clock Frequency – SPI Compatible Modes 0 and 3 • User Configurable Page Size • • • • • • • • • • • • • – 256 Bytes per Page – 264 Bytes per Page – Page Size Can Be Factory Pre-configured for 256 Bytes Page Program Operation – Intelligent Programming Operation – 512 Pages (256/264 Bytes/Page) Main Memory Flexible Erase Options – Page Erase (256 Bytes) – Block Erase (2 Kbytes) – Sector Erase (32 Kbytes) – Chip Erase (1 Mbits) One SRAM Data Buffer (256/264 Bytes) Continuous Read Capability through Entire Array – Ideal for Code Shadowing Applications Low-power Dissipation – 7 mA Active Read Current Typical – 25 µA Standby Current Typical – 15 µA Deep Power-down Typical Hardware and Software Data Protection Features – Individual Sector Sector Lockdown for Secure Code and Data Storage – Individual Sector Security: 128-byte Security Register – 64-byte User Programmable Space – Unique 64-byte Device Identifier JEDEC Standard Manufacturer and Device ID Read 100,000 Program/Erase Cycles Per Page Minimum Data Retention – 20 Years Industrial Temperature Range Green (Pb/Halide-free/RoHS Compliant) Packaging Options 1-megabit 2.7-volt Minimum DataFlash® AT45DB011D 1. Description The AT45DB011D is a 2.7V, serial-interface Flash memory ideally suited for a wide variety of digital voice-, image-, program code- and data-storage applications. The AT45DB011D supports RapidS serial interface for applications requiring very high speed operations. RapidS serial interface is SPI compatible for frequencies up to 66 MHz. Its 1,081,344 bits of memory are organized as 512 pages of 256 bytes or 264 bytes each. In addition to the main memory, the AT45DB011D also contains one SRAM buffer of 256/264 bytes. EEPROM emulation (bit or byte alterability) is easily handled with a self-contained three step read-modify-write operation. Unlike conventional Flash memories that are accessed randomly with multiple address lines and a parallel interface, the DataFlash ® uses a RapidS serial interface to sequentially access its data. The simple sequential access dramatically reduces active pin count, facilitates hardware layout, increases system reliability, minimizes switching noise, and reduces package size. 3639H–DFLASH–04/09

ブランド

ADESTO

会社名

ADESTO TECHNOLOGIES

本社国名

U.S.A

事業概要

In 2006, the founders of Adesto Technologies set out to build a new company focused on developing innovative, low-power memory solutions based on a promising type of Resistive RAM technology called Conductive Bridging RAM (CBRAM). CBRAM technology is different from other emerging memories in that it can be customized to serve a wide range of applications. As a standalone memory, commercial products based on CBRAM technology, have inherent advantages over competitive non-volatile memories. Its advantages include ultra low-energy consumption and ultra-fast write capabilities, making it a natural fit for Internet of Things, Wearables, and other energy-conscious applications. In addition, Adesto has licensed its technology as an embedded memory to several large SOC (System on Chip) Semiconductor companies and thus enabled them to develop a future roadmap without limitations.

供給状況

 
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