DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1912
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
PACKAGE DRAWING (Unit : mm)
DESCRIPTION
0.32 +0.1
–0.05
0.65–0.15
directly by a 2.5-V power source.
+0.1
The µPA1912 features a low on-state resistance and excellent
2.8 ±0.2
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
0.16+0.1
–0.06
6
5
4
1
2
3
1.5
The µPA1912 is a switching device which can be driven
FEATURES
0 to 0.1
• Can be driven by a 2.5-V power source
• Low on-state resistance
0.95
0.65
0.95
RDS(on)1 = 50 mΩ MAX. (VGS = –4.5 V, ID = –2.5 A)
1.9
RDS(on)2 = 52 mΩ MAX. (VGS = –4.0 V, ID = –2.5 A)
2.9 ±0.2
RDS(on)3 = 70 mΩ MAX. (VGS = –2.5 V, ID = –2.5 A)
0.9 to 1.1
1, 2, 5, 6 : Drain
3
: Gate
4
: Source
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA1912TE
SC-95 (Mini Mold Thin Type)
EQUIVALENT CIRCUIT
Drain
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Body
Diode
Drain to Source Voltage
VDSS
–12
V
Gate to Source Voltage
VGSS
±10
V
Drain Current (DC)
ID(DC)
±4.5
A
ID(pulse)
±18
A
Gate
Protection
Diode
PT1
0.2
W
Marking: TD
PT2
2
W
Drain Current (pulse)
Note1
Total Power Dissipation
Total Power Dissipation
Note2
Channel Temperature
Tch
150
Tstg
–55 to +150
Source
°C
Storage Temperature
Gate
°C
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Mounted on FR-4 board, t ≤ 5 sec.
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13806EJ3V0DS00 (3rd edition)
Date Published May 2001 NS CP(K)
Printed in Japan
The mark ! shows major revised points.
©
1998, 1999
