HN1C01F
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
HN1C01F
Unit: mm
Audio-Frequency General-Purpose Amplifier Applications
Small package (dual type)
High voltage and high current
: VCEO = 50 V, IC = 150 mA (max)
High hFE : hFE = 120~400
Excellent hFE linearity
: hFE (IC = 0.1 mA) / hFE (IC = 2 mA) = 0.95 (typ.)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
150
mA
Base current
IB
30
mA
PC*
300
mW
Tj
125
°C
Tstg
−55~125
°C
Collector power dissipation
Junction temperature
Storage temperature range
JEDEC
―
JEITA
―
TOSHIBA
2-3N1A
Weight: 0.015 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating
Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)
Symbol
Test
Circuit
Collector cut-off current
ICBO
―
Emitter cut-off current
IEBO
DC current gain
Collector-emitter
saturation voltage
Characteristic
Transition frequency
Collector output capacitance
Test Condition
Min
Typ.
Max
Unit
VCB = 60 V, IE = 0
―
―
0.1
μA
―
VEB = 5 V, IC = 0
―
―
0.1
μA
hFE (Note)
―
VCE = 6 V, IC = 2 mA
120
―
400
VCE (sat)
―
IC = 100 mA, IB = 10 mA
―
0.1
0.25
V
fT
―
VCE = 10 V, IC = 1 mA
80
―
―
MHz
Cob
―
VCB = 10 V, IE = 0, f = 1 MHz
―
2
3.5
pF
Note: hFE Classification
Y (Y): 120~240, GR (G): 200~400
( ) Marking symbol
1
2007-11-01
