FDN360P
Single P-Channel, PowerTrench® MOSFET
General Description
Features
This P-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor advanced Power Trench
process that has been especially tailored to minimize
the on-state resistance and yet maintain low gate
charge for superior switching performance.
• –2 A, –30 V.
RDS(ON) = 80 mΩ @ VGS = –10 V
RDS(ON) = 125 mΩ @ VGS = –4.5 V
• Low gate charge (6.2 nC typical)
• High performance trench technology for extremely
low RDS(ON) .
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
• High power version of industry Standard SOT-23
package. Identical pin-out to SOT-23 with 30%
higher power handling capability.
D
D
S
G
TM
SuperSOT -3
Absolute Maximum Ratings
Symbol
S
G
TA=25oC unless otherwise noted
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
–30
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current
–2
A
PD
Power Dissipation for Single Operation
– Continuous
(Note 1a)
– Pulsed
–10
0.5
(Note 1b)
TJ, TSTG
(Note 1a)
0.46
Operating and Storage Junction Temperature Range
–55 to +150
W
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
RθJA
(Note 1a)
Thermal Resistance, Junction-to-Case
RθJC
(Note 1)
250
°C/W
75
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
360
FDN360P
7’’
8mm
3000 units
©2003 Fairchild Semiconductor Corporation
FDN360P Rev F1 (W)
FDN360P
May 2003
