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2SK4017

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仕様・特性

2SK4017 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS III) 2SK4017 Chopper Regulator, DC-DC Converter and Motor Drive Applications 1.5 ± 0.2 Unit: mm 6.5 ± 0.2 5.2 ± 0.2 4-V gate drive 0.6 MAX. High forward transfer admittance: |Yfs| = 6.0 S (typ.) 1.6 Low leakage current: IDSS = 100 μA (max) (VDS = 60 V) Enhancement mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA) 1.1 ± 0.2 2.3 2.3 Rating Unit Drain−source voltage VDSS 60 V Drain−gate voltage (RGS = 20 kΩ) VDGR 60 V Gate−source voltage VGSS ±20 V (Note 1) ID 5 A Pulse (Note 1) IDP 20 A Drain power dissipation (Tc = 25°C) PD 20 W Single-pulse avalanche energy (Note 2) EAS 40.5 mJ Avalanche current IAR 5 A Repetitive avalanche energy (Note 3) EAR 2 Channel temperature Tch Storage temperature range Tstg Drain current DC 1 0.8 MAX. 2 2.3 ± 0.2 Symbol 0.6 MAX. 5.7 4.1 ± 0.2 0.9 Absolute Maximum Ratings (Ta = 25°C) Characteristic 5.5 ± 0.2 Low drain−source ON-resistance: RDS (ON) = 0.07 Ω (typ.) 3 0.6 ± 0.15 1.1 MAX. 0.6 ± 0.15 2 1. 2. GATE DRAIN (HEAT SINK) 3. SOURSE 1 3 JEDEC ⎯ mJ JEITA ⎯ 150 °C TOSHIBA −55 to 150 °C Weight: 0.36 g (typ.) 2-7J2B Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to case Rth (ch−c) 6.25 °C / W Thermal resistance, channel to ambient Rth (ch−a) 125 °C / W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 25 V, Tch = 25°C (initial), L = 2.2 mH, RG = 25 Ω, IAR = 5 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 2008-06-16

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