DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP90N04MUG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP90N04MUG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
NP90N04MUG-S18-AY
LEAD PLATING
PACKING
PACKAGE
Pure Sn (Tin)
Tube 50 p/tube
TO-220 (MP-25K) typ. 1.9 g
Note
Note Pb-free (This product does not contain Pb in the external electrode).
FEATURES
(TO-220)
• Super low on-state resistance
RDS(on) = 3.0 mΩ MAX. (VGS = 10 V, ID = 45 A)
• Channel temperature 175 degree rated
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
40
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±90
A
ID(pulse)
±360
A
Total Power Dissipation (TC = 25°C)
PT1
217
W
Total Power Dissipation (TA = 25°C)
PT2
1.8
W
Channel Temperature
Tch
175
°C
Drain Current (pulse)
Note1
Tstg
−55 to +175
°C
Repetitive Avalanche Current
Note2
IAR
60
A
Repetitive Avalanche Energy
Note2
EAR
360
mJ
Storage Temperature
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Tch ≤ 150°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Rth(ch-C)
0.69
°C/W
Channel to Ambient Thermal Resistance
Rth(ch-A)
83.3
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18665EJ2V0DS00 (2nd edition)
Date Published April 2007 NS CP(K)
Printed in Japan
The mark shows major revised points.
The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field.
2007
