< Silicon RF Power MOS FET (Discrete) >
RD06HHF1
RoHS Compliance,
Silicon MOSFET Power Transistor 30MHz,6W
DESCRIPTION
OUTLINE
DRAWING
RD06HHF1 is a MOS FET type transistor specifically
1.3+/-0.4
9.1+/-0.7
High power gain:
12.3MIN
Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz
APPLICATION
2
9+/-0.4
FEATURES
3.6+/-0.2
4.8MAX
12.3+/-0.6
3.2+/-0.4
designed for HF RF power amplifiers applications.
1.2+/-0.4
0.8+0.10/-0.15
For output stage of high power amplifiers in
1
2 3
HF band mobile radio sets.
0.5+0.10/-0.15
3.1+/-0.6
5deg
9.5MAX
RoHS COMPLIANT
4.5+/-0.5
2.5 2.5
PINS
1:GATE
2:SOURCE
3:DRAIN
note:
Torelance of no designation means typical value.
Dimension in mm.
RD06HHF1-101 is a RoHS compliant products.
RoHS compliance is indicate by the letter “G” after the lot
marking.
This product include the lead in high melting temperaturetype solders.
However,it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
Publication Date : Oct．2011
1
