MITSUBISHI SEMICONDUCTOR
M54530P/FP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M54530P and M54530FP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of
NPN transistors. Both the semiconductor integrated circuits
perform high-current driving with extremely low input-current
supply.
PIN CONFIGURATION
INPUT
16 →O1
IN2→ 2
15 →O2
IN3→ 3
14 →O3
IN4→ 4
13 →O4 OUTPUT
IN5→ 5
12 →O5
IN6→ 6
11 →O6
IN7→ 7
10 →O7
GND
FEATURES
High breakdown voltage (BV CEO ≥ 40V)
High-current driving (Ic(max) = 400mA)
With clamping diodes
Driving available with PMOS IC output
Wide operating temperature range (Ta = –20 to +75°C)
IN1→ 1
9 →COM COMMON
8
16P4(P)
Package type 16P2N-A(FP)
CIRCUIT DIAGRAM
COM
OUTPUT
APPLICATION
Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and MOS-bipolar logic IC interfaces
INPUT
20K
20K
2K
GND
The seven circuits share the COM and GND.
FUNCTION
The M54530P and M54530FP each have seven circuits consisting of NPN Darlington transistors. These ICs have resistance of 20kΩ between input transistor bases and input pins.
A spike-killer clamping diode is provided between each output pin (collector) and COM pin (pin 9). The output transistor
emitters are all connected to the GND pin (pin 8).
The collector current is 400mA maximum. Collector-emitter
supply voltage is 40V maximum.
The M54530FP is enclosed in a molded small flat package,
enabling space-saving design.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO
IC
VI
IF
VR
Pd
Topr
Tstg
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit : Ω
(Unless otherwise noted, Ta = –20 ~ +75 °C)
Parameter
Collector-emitter voltage
Collector current
Conditions
Output, H
Current per circuit output, L
Clamping diode forward current
Clamping diode reverse voltage
Storage temperature
Unit
V
Ta = 25°C, when mounted on board
400
mA
–0.5 ~ +40
400
Input voltage
Power dissipation
Operating temperature
Ratings
–0.5 ~ +40
V
mA
40
1.47(P)/1.00(FP)
V
W
–20 ~ +75
–55 ~ +125
°C
°C
Aug. 1999
