MG100J2YS50
TOSHIBA GTR Module Silicon N Channel IGBT
MG100J2YS50
Unit: mm
High Power Switching Applications
Motor Control Applications
l The electrodes are isolated from case.
l High input impedance.
l Includes a complete half bridge in one package.
l Enhancement-mode.
l High speed : tf = 0.30µs (Max) (IC = 100A)
trr = 0.15µs (Max) (IF = 100A)
l Low saturation voltage
: VCE (sat)=2.70V (Max) (IC=100A)
Equivalent Circuit
JEDEC
EIAJ
TOSHIBA
―
―
2-94D1A
Weight: 202g (Typ.)
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-emitter voltage
VCES
600
V
Gate-emitter voltage
VGES
±20
V
DC
IC
100
1ms
ICP
200
DC
IF
100
1ms
IFM
200
Collector power dissipation (Tc=25°C)
PC
450
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−40 ~ 125
°C
Isolation voltage
VIsol
2500
(AC 1 min.)
V
―
3/3
N·m
Collector current
Forward current
Screw torque (Terminal / mounting)
A
A
000707EAA2
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the
buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and
to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or
damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the
most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling
Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
2001-02-22
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