FQPF85N06
N-Channel QFET® MOSFET
60 V, 53 A, 10 mΩ
Description
Features
• 53 A, 60 V, RDS(on) = 10 mΩ (Max.) @ VGS = 10 V,
ID = 30 A
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
audio amplifier, DC motor control, and variable switching
power applications.
• Low Gate Charge (Typ. 36 nC)
• Low Crss (Typ. 165 pF)
• 100% Avalanche Tested
• 175°C Maximum Junction Temperature Rating
D
G
D
S
G
TO-220F
S
Absolute Maximum Ratings
Symbol
VDSS
ID
TC = 25°C unless otherwise noted.
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
FQPF85N06
60
53
- Continuous (TC = 100°C)
IDM
Drain Current
Unit
V
A
37.5
- Pulsed
(Note 1)
A
212
A
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanche Current
(Note 1)
53
A
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
(Note 1)
6.2
7.0
62
0.41
-55 to +175
mJ
V/ns
W
W/°C
°C
300
°C
FQPF85N06
2.42
Unit
°C/W
62.5
°C/W
dv/dt
PD
TJ, TSTG
TL
± 25
(Note 3)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 seconds
V
820
mJ
Thermal Characteristics
Symbol
RθJC
Parameter
Thermal Resistance, Junction-to-Case, Max.
RθJA
Thermal Resistance, Junction-to-Ambient, Max.
©2001 Fairchild Semiconductor Corporation
FQPF85N06 Rev. C1
1
www.fairchildsemi.com
FQPF85N06 — N-Channel QFET® MOSFET
November 2013