2SC2859
TOSHIBA Transistor
Silicon NPN Epitaxial (PCT process)
2SC2859
Audio Frequency Low Power Amplifier Applications
Driver Stage Amplifier Applications
Switching Applications
Excellent hFE linearity
:
IC = 400 mA)
• Complementary to 2SA1182.
Unit: mm
hFE (2) = 25 (min) (VCE = 6 V,
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
35
V
Collector-emitter voltage
VCEO
30
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
500
mA
Base current
IB
50
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
125
°C
Tstg
−55~125
°C
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
TO-236MOD
temperature/current/voltage and the significant change in
JEITA
SC-59
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-3F1A
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Weight: 0.012 g (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
ICBO
Collector output capacitance
Note: hFE (1) classification
hFE (2) classification
Typ.
Max
Unit
⎯
⎯
0.1
μA
μA
VEB = 5 V, IC = 0
⎯
⎯
0.1
hFE (1)
VCE = 1 V, IC = 100 mA
70
⎯
400
hFE (2)
VCE = 6 V, IC = 400 mA
25
⎯
⎯
VCE (sat)
IC = 100 mA, IB = 10 mA
⎯
0.1
0.25
V
VCE = 1 V, IC = 100 mA
⎯
0.8
1.0
V
fT
(Note)
Collector-emitter saturation voltage
Transition frequency
Min
VBE
Emitter cut-off current
Base-emitter voltage
VCB = 35 V, IE = 0
IEBO
Collector cut-off current
DC current gain
Test Condition
VCE = 6 V, IC = 20 mA
⎯
300
⎯
MHz
VCB = 6 V, IE = 0, f = 1 MHz
⎯
7
⎯
pF
Cob
O (O): 70~140, Y (Y): 120~240, GR (G): 200~400
O: 25 min, Y: 40 min, GR: 70 min
( ) marking symbol
Marking
1
2007-11-01
