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IMD2A
EMD2 / UMD2N / IMD2A Transistors General purpose (dual digital transistors) EMD2 / UMD2N / IMD2A External dimensions (Units : mm) (3) 0.22 (4) (5) (2) (6) 0.5 0.5 1.0 1.6 EMD2 (1) 1.2 1.6 0.5 0.13 Features 1) Both the DTA124E chip and DTC124E chip in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. Each lead has same dimensions ROHM : EMT6 2.0 1.3 (3) (1) 1.25 0.65 (2) (4) (6) (5) 0.2 Structure Epitaxial planar type NPN / PNP silicon transistor (Built-in resistor type) 0.65 Abbreviated symbol : D2 EMD2N 0.1Min. The following characteristics apply to both the DTr1 and DTr2, however, the “−” sign on DTr2 values for the PNP type have been omitted. 0to0.1 0.9 0.7 0.15 2.1 Each lead has same dimensions ROHM : UMT6 EIAJ : SC-88 Abbreviated symbol : D2 DTr2 DTr2 R2 R1 (4) (5) (6) (1) (2) R2=22kΩ (1) 1.1 0.8 0.3to0.6 R1=22kΩ R2 R1 (3) (2) 0.95 0.95 1.9 2.9 2.8 DTr1 0to0.1 R1=22kΩ R2=22kΩ 1.6 (4) (5) (6) R1 R2 DTr1 (3) IMD2A (3) (2) (1) R1 R2 0.15 EMD2 / UMD2N (4) (5) 0.3 Equivalent circuit (6) IMD2A Each lead has same dimensions ROHM : SMT6 EIAJ : SC-74 Abbreviated symbol : D2 Absolute maximum ratings (Ta = 25°C) Parameter Supply voltage Input voltage Output current EMD2, UMD2N Power dissipation IMD2A Symbol Limits Unit VCC 50 V VIN 40 −10 IO 30 IC (Max.) 100 Pd 150 (TOTAL) V mA mW 300 (TOTAL) Junction temperature Tj 150 ˚C Storage temperature Tstg −55∼+150 ˚C ∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded. ∗1 ∗2
ROHM
ローム株式会社
日本
炭素皮膜抵抗の特許を元に創業した。社名のROHM(R:抵抗 Ohm:抵抗を示す単位)はそこに由来する。その後、大規模集積回路の製造を手がけ始め、現在は様々な機能を顧客の要望に応じてLSI上に集積するカスタムLSIが主力となっている。
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