FDP33N25
N-Channel UniFETTM MOSFET
250 V, 33 A, 94 mΩ
Features
Description
• RDS(on) = 94 mΩ (Max.) @ VGS = 10 V, ID = 16.5 A
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
• Low Gate Charge (Typ. 36.8 nC)
• Low Crss (Typ. 39 pF)
• 100% Avalanche Tested
Applications
• PDP TV
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
D
GD
S
G
TO-220
S
Absolute Maximum Ratings
TC =
Symbol
25oC
unless otherwise noted.
Parameter
FDP33N25
ID
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Current
- Pulsed
(Note 1)
V
33
20.4
Drain-Source Voltage
Unit
250
VDSS
A
A
132
A
± 30
V
918
mJ
VGSS
Gate-Source voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanche Current
(Note 1)
33
A
EAR
Repetitive Avalanche Energy
(Note 1)
23.5
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD
Power Dissipation
W
W/°C
°C
300
°C
FDP33N25
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
V/ns
-55 to +150
TJ, TSTG
TL
4.5
235
1.89
(TC = 25°C)
- Derate Above 25°C
Unit
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case, Max.
0.53
RθJA
Thermal Resistance, Junction-to-Ambient, Max.
62.5
©2007 Fairchild Semiconductor Corporation
FDP33N25 Rev. C1
1
°C/W
www.fairchildsemi.com
FDP33N25 — N-Channel UniFETTM MOSFET
November 2013
