New Product
SS8P2L & SS8P3L
Vishay General Semiconductor
High Current Density Surface Mount
Schottky Barrier Rectifiers
eSMP
TM
FEATURES
• Very low profile - typical height of 1.1 mm
Series
• Ideal for automated placement
K
• Low forward voltage drop, low power
losses
• High efficiency
1
• Low thermal resistance
2
• “Green” molding compound (GMC)
TO-277A (SMPC)
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
Anode 1
K
Cathode
Anode 2
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
PRIMARY CHARACTERISTICS
IF(AV)
8A
VRRM
20 V, 30 V
IFSM
150 A
EAS
20 mJ
VF at IF = 8.0 A
0.472 V
TJ max.
150 °C
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94V-0 flammability
rating.
“G” vs. “E” suffix defines molding as none green, “E”,
or green molding compound (GMC) “G”.
“G” is defined as halogen-free (HF) and antimony-free
molding compound.
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, dc-to-dc converters, and polarity
protection applications.
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 and G3 suffix for consumer grade, meets JESD 201
class 1A whisker test, HE3 and HG3 suffix for
high reliability grade (AEC Q101 qualified), meets
JESD 201 class 2 whisker test
Note:
• There is no industry standard for definition of HF, or GMC for
components.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS8P3L
S82
Device marking code
SS8P2L
S83
20
30
UNIT
Maximum repetitive peak reverse voltage
VRRM
Maximum average forward rectified current (Fig. 1)
IF(AV)
8.0
A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
150
A
Non-repetitive avalanche energy
at IAS = 2 A, TJ = 25 °C
EAS
20
mJ
TJ, TSTG
- 55 to + 150
°C
Operating junction and storage temperature range
Document Number: 89001
Revision: 26-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
V
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