Si7460DP
Vishay Siliconix
N-Channel 60-V (D-S) Fast Switching MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
0.0096 at VGS = 10 V
18
0.012 at VGS = 4.5 V
60
ID (A)
• TrenchFET® Power MOSFET
• New Low Thermal Resistance PowerPAK®
Package with Low 1.07 mm Profile
16
RoHS*
COMPLIANT
APPLICATIONS
• Automotive 12/24-V Battery
- ABS
- ECU
- Motor Drives
PowerPAK SO-8
S
6.15 mm
Pb-free
Available
5.15 mm
1
S
2
S
3
G
D
4
D
8
D
7
D
6
G
D
5
Bottom View
S
Ordering Information: Si7460DP-T1
Si7460DP-T1-E3 (Lead (Pb)-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
TA = 25 °C
TA = 70 °C
Continuous Drain Current (TJ = 150 °C)a
Pulsed Drain Current
IDM
IS
Continuous Source Current (Diode Conduction)a
Avalanche Current
Avalanche Energy
18
14
4.3
IAS
EAS
TA = 25 °C
TA = 70 °C
Maximum Power Dissipationa
PD
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
ID
10 secs
b,c
Steady State
60
± 20
11
8
40
1.6
50
125
Unit
V
A
mJ
5.4
3.4
1.9
1.2
- 55 to 150
260
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Case (Drain)
Symbol
t ≤ 10 sec
Steady State
Steady State
RthJA
RthJC
Typical
18
52
1.0
Maximum
23
65
1.3
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is
not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72126
S-52554-Rev. B, 30-Mar-06
www.vishay.com
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