HN2D01F
TOSHIBA Diode
Silicon Epitaxial Planar Type
HN2D01F
Ultra High Speed Switching Application
Unit in mm
HN2D01F is composed of 3 independent diodes.
Low forward voltage
: VF (3) = 0.98V (typ.)
Fast reverse recovery time : trr = 1.6ns (typ.)
Small total capacitance
: CT = 0.5μF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
VRM
85
V
Reverse voltage
VR
80
V
Maximum (peak) forward current
IFM
240 (*)
mA
Average forward current
IO
80 (*)
mA
IFSM
1 (*)
A
Power dissipation
P
300
mW
Junction temperature
Tj
125
°C
Tstg
−55~125
°C
Maximum (peak) reverse Voltage
Surge current (10ms)
Storage temperature range
JEDEC
―
SC-74
JEITA
1-3K1C
TOSHIBA
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 0.015g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(*) This is absolute maximum rating of single diode (Q1 or Q2 or Q3).
In the case of using 2 ro 3 diodes, the absolute maximum ratings
per diodes is 75 %f the single diode one.
Electrical Characteristics (Q1, Q2, Q3 Common Ta = 25°C)
Symbol
Test
Circuit
VF (1)
Characteristic
―
VF (2)
Reverse current
Total capacitance
Reverse recovery time
Min
Typ.
Max
IF = 1mA
―
0.62
―
―
IF = 10mA
―
0.75
―
VF (3)
Forward voltage
Test Condition
―
IF = 100mA
―
0.98
1.20
IR (1)
―
VR = 30V
―
―
0.1
IR (2)
―
VR = 80V
―
―
0.5
CT
―
VR = 0, f = 1MHz
―
0.5
3.0
pF
trr
―
IF = 10mA (Fig.1)
―
1.6
4.0
ns
1
Unit
V
μA
2007-11-01
