STW20NM50
N-CHANNEL 550V @ Tjmax - 0.20Ω - 20A TO-247
MDmesh™ MOSFET
TYPE
STW20NM50
VDSS
(@Tjmax)
RDS(on)
ID
550V
< 0.25Ω
20 A
TYPICAL RDS(on) = 0.20Ω
HIGH dv/dt AND AVALANCHE CAPABILITIES
100% AVALANCHE TESTED
LOW INPUT CAPACITANCE AND GATE
CHARGE
LOW GATE INPUT RESISTANCE
TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition’s products.
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
The MDmesh™ family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
Symbol
Value
Unit
Gate- source Voltage
±30
V
ID
Drain Current (continuous) at TC = 25°C
20
A
ID
Drain Current (continuous) at TC = 100°C
12.6
A
80
A
VGS
IDM ( )
PTOT
Parameter
Drain Current (pulsed)
Tstg
Tj
214
W
Derating Factor
dv/dt (1)
Total Dissipation at TC = 25°C
1.44
W/°C
15
V/ns
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
–65 to 150
°C
150
°C
(•)Pulse width limited by safe operating area
(1) ISD ≤20A, di/dt ≤400A/µs, VDD ≤ V(BR)DSS, Tj ≤ T JMAX.
February 2004
1/8
