Application Information
SIM6800M Series High Voltage 3-Phase Motor Driver ICs
Introduction
The SIM6800M series is an inverter power module which
includes power MOSFETs or IGBTs, pre-driver IC, and
bootstrap diodes with limit resistors in a single package.
The device provides an ideal solution especially for small
size inverter motors such as fans and pumps. These ICs take
230 VAC input voltage, and up to 5 A (continuous) output
current. Figure 1 shows the functional block diagram of the
device.
High voltage power supply is applied between VBB and
LSx. 15 V is applied between VCC1 and COM1, and VCC2
and COM2. Six signals, HIN1 through HIN3 and LIN1
through LIN3, control the on-off switching of the six internal
power MOSFETs or IGBTs. These input signals are active
high (xIN = High → MOSFET on). Boot capacitors should
be connected between VB1A or VB1B and U, VB2 and V,
and VB3 and W1, for high-side power supply.
The device includes: OCP (overcurrent protection, activated
for example at a short on the inverter bridge), TSD (thermal
shutdown, activated for example at abnormal temperatures,
or overloads), and UVLO (protection circuit for sudden
drops of the controlling power supply voltage). Operation of
these protection features can be monitored on the fault signal
¯
output pin, ¯ ¯ .
FO
There is a current limiter function for the MOSFET or IGBT
control signal. When the current through a shunt resistor
exceeds the threshold, the OCL pin goes high (active high).
By connecting this signal to the SD pin, current limiter
operation (high-side of MOSFETs or IGBTs turned off for 1
carrier PWM cycle) can be performed.
Table 1. SIM6800M Series Lineups
Power Device Rating
Part
Number
SIM6802M
(Max)
Boot
Resistance
(Ω)
Input
Voltage
(VAC)
0.5
60
100
RDS(ON) (Ω)
Type
Breakdown
(V)
Output
(A)
(Typ)
MOSFET
250
2.5
0.35
Note
SIM6811M
MOSFET
500
2.0
3.2
4.0
60
200
Low switching loss
SIM6812M
MOSFET
500
2.5
2.0
2.4
60
200
Low switching loss
SIM6813M
MOSFET
500
3.0
1.4
1.7
60
200
Low noise,
under development
SIM6814M
MOSFET
500
4.0
TBD
1.45
60
200
Under development
SIM6816M
MOSFET
500
2.0
3.2
4.0
60
200
Low noise
SIM6817M
MOSFET
500
2.5
2.0
2.4
60
200
Low noise
SIM6818M
MOSFET
500
3.0
1.4
1.7
60
200
Low switching loss,
under development
SIM6821M
MOSFET
600
2.0
2.9
3.5
60
200
Under development
IGBT
600
5.0
60
200
SIM6822M
SIM6827M
VCE(sat) (V)
1.75
2.2
Low switching loss
Low noise
Table of Contents
Introduction
Features
Pin Functions
Protection Functions
Application Information
Cautions and Warnings
Package Diagram
Performance Characteristics
SIM6800-AN
SANKEN ELECTRIC CO., LTD.
http://www.sanken-ele.co.jp/en/
1
2
4
7
12
13
14
15
Preliminary Data
Subject to Change Without Notice
November 12, 2012
