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55A021-22-09
BUK9832-55A N-channel TrenchMOS logic level FET Rev. 02 — 1 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Low conduction losses due to low on-state resistance Suitable for logic level gate drive sources Q101 compliant 1.3 Applications 12 V and 24 V loads Motors, lamps and solenoids Automotive and general purpose power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C - - 55 V ID drain current VGS = 5 V; Tsp = 25 °C; see Figure 1; see Figure 3 - - 12 A Ptot total power dissipation Tsp = 25 °C; see Figure 2 - - 8 W VGS = 4.5 V; ID = 8 A; Tj = 25 °C - - 36 mΩ VGS = 10 V; ID = 8 A; Tj = 25 °C - 25 29 mΩ VGS = 5 V; ID = 8 A; Tj = 25 °C; see Figure 12; see Figure 13 - 27 32 mΩ - - 100 mJ Static characteristics RDSon drain-source on-state resistance Avalanche ruggedness EDS(AL)S non-repetitive ID = 10 A; Vsup ≤ 55 V; drain-source RGS = 50 Ω; VGS = 5 V; avalanche energy Tj(init) = 25 °C; unclamped
TYCO
1999年9月 合併により、AMP IncからTyco Electronics Corporationに社名変更。 2011年3月 企業ブランドが、Tyco ElectronicsからTE Connectivityになる。
TE Connectivity Ltd
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