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K-9W100OHM
K9W4G08U1M K9K2G08Q0M K9K2G08U0M K9W4G16U1M K9K2G16Q0M K9K2G16U0M FLASH MEMORY Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Aug. 30.2001 Advance 0.1 1. IOL(R/B) of 1.8V device is changed. Nov. 5. 2001 Preliminary -min. Value: 7mA -->3mA -typ. Value: 8mA -->4mA 0.2 1. 5th cycle of ID is changed : 40h --> 44h Jan. 23. 2002 Preliminary 0.3 1. Add WSOP Package Dimensions. May. 29. 2002 Preliminary 0.4 1. Add two-K9K2GXXU0M-YCB0/YIB0 Stacked Package Aug. 13. 2 002 Preliminary 0.5 1. Min valid block of K9W4GXXU1M-YCB0/YIB0 is changed . - min. 4016 --> 4036 Aug. 22. 2002 Preliminary 0.6 1. Each K9K2GXXX0M chip in the K9W4GXXU1M has Maximum 30 Nov. 07. 2002 Preliminary invalid blocks. 2. K9W4GXXU1M’ ID is changed s (Before) Device 2nd Cycle 3rd cycle 4th Cycle 5th Cycle K9W4G08U1M DCh C3 15h 4Ch K9W4G16U1M CCh C3 55h 4Ch 4th Cycle 5th Cycle (After) Device 2nd Cycle 3rd cycle K9W4G08U1M DAh C1 15h 44h K9W4G16U1M CAh C1 55h 44h 0.7 1. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 36) 2. Add the data protection Vcc guidence for 1.8V device - below about 1.1V. (Page 37) Nov. 22. 2002 Preliminary 0.8 1. The min. Vcc value 1.8V devices is changed. K9K2GXXQ0M : Vcc 1.65V~1.95V --> 1.70V~1.95V Mar. 6. 2003 Preliminary The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near your office. 1
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