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2SK879

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2SK879 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Condenser Microphone Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA (max) (VGS = −30 V) • Low noise: NF = 0.5dB (typ.) (RG = 100 kΩ, f = 120 Hz) • Small package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit VGDS −50 V Gate current IG 10 mA Drain power dissipation PD 100 mW Junction temperature Tj 125 °C Tstg −55~125 °C Gate-drain voltage Storage temperature range Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). JEDEC ― JEITA SC-70 TOSHIBA 2-2E1B Weight: 0.006 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Gate cut-off current Gate-drain breakdown voltage Drain current Symbol Test Condition Min Typ. Max Unit IGSS VGS = −30 V, VDS = 0 ⎯ ⎯ −1.0 nA V (BR) GDS VDS = 0, IG = −100 μA −50 ⎯ ⎯ V VDS = 10 V, VGS = 0 0.3 ⎯ 6.5 mA VDS = 10 V, ID = 0.1 μA −0.4 ⎯ −5.0 V VDS = 10 V, VGS = 0, f = 1 kHz 1.2 ⎯ ⎯ mS IDSS (Note) Gate-source cut-off voltage VGS (OFF) Forward transfer admittance ⎪Yfs⎪ Input capacitance Ciss VDS = 10 V, VGS = 0, f = 1 MHz ⎯ 8.2 ⎯ pF Reverse transfer capacitance Crss VGD = −10 V, ID = 0, f = 1 MHz ⎯ 2.6 ⎯ pF Noise figure NF ⎯ 0.5 ⎯ dB Note: IDSS classification VDS = 15 V, VGS = 0 RG = 100 kΩ, f = 120 Hz R: 0.30~0.75 mA, O: 0.60~1.40 mA, Y: 1.2~3.0 mA, GR: 2.6~6.5 mA Marking 1 2007-11-01

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