2SJ660
Ordering number : EN8585
P-Channel Silicon MOSFET
2SJ660
General-Purpose Switching Device
Applications
Features
•
•
•
•
•
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Motor drive, DC / DC converter.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
--60
Gate-to-Source Voltage
VGSS
±20
V
ID
--26
A
Drain Current (DC)
Drain Current (Pulse)
IDP
PW≤10µs, duty cycle≤1%
V
--104
A
1.65
W
Allowable Power Dissipation
PD
50
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
115
mJ
Avalanche Current *2
IAV
--26
A
Tc=25°C
Note : *1 VDD=30V, L=200µH, IAV=--26A
*2 L≤200µH, Single pulse
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Ratings
min
typ
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
ID=--1mA, VGS=0V
VDS=-60V, VGS=0V
VGS= ±16V, VDS=0V
VDS=-10V, ID=--1mA
VDS=-10V, ID=-13A
--1.2
RDS(on)1
RDS(on)2
ID=--13A, VGS=--10V
ID=--13A, VGS=--4V
Unit
max
--60
IDSS
IGSS
VGS(off)
yfs
Zero-Gate Voltage Drain Current
V(BR)DSS
Conditions
V
--1
±10
11
--2.6
19
µA
µA
V
S
46
Marking : J660
60
mΩ
67
94
mΩ
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1805QA MSIM TB-00001077 No.8585-1/4
