NAND02G-B2D
2 Gbit, 2112-byte/1056-word page
multiplane architecture, 1.8 V or 3 V, NAND Flash memories
Preliminary Data
Features
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High density NAND Flash memory
– Up to 2 Gbit memory array
– Cost-effective solution for mass storage
applications
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NAND interface
– x 8 or x 16 bus width
– Multiplexed address/data
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Supply voltage: 1.8 V or 3.0 V device
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TSOP48 12 x 20 mm (N)
Page size
– x 8 device: (2048 + 64 spare) bytes
– x 16 device: (1024 + 32 spare) words
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Block size
– x 8 device: (128 K + 4 K spare) bytes
– x 16 device: (64 K + 2 K spare) words
Multiplane architecture
– Array split into two independent planes
– Program/erase operations can be
performed on both planes at the same time
Page read/program
– Random access: 25 µs (max)
– Sequential access: 25 ns (min)
– Page program time: 200 µs (typ)
– Multiplane page program time (2 pages):
200 µs (typ)
FBGA
VFBGA63 9.5 x 12 mm (ZA)
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Status register
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Electronic signature
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Chip Enable ‘don’t care’
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Serial number option
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Data protection:
– Hardware program/erase disabled during
power transitions
– Non-volatile protection option
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ONFI 1.0 compliant command set
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Data integrity
– 100,000 program/erase cycles (with ECC)
– 10 years data retention
ECOPACK® packages
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Copy back program with automatic EDC (error
detection code)
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Cache read mode
Table 1.
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Fast block erase
– Block erase time: 1.5 ms (typ)
– Multiblock erase time (2 blocks): 1.5 ms
(typ)
Device summary
Reference
Part number
NAND02GR3B2D
NAND02G-B2D
NAND02GW3B2D
NAND02GR4B2D(1)
NAND02GW4B2D(1)
1. x 16 organization only available for MCP products.
February 2008
Rev 2
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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