MITSUBISHI SEMICONDUCTOR
M54519P/FP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY
DESCRIPTION
M54519P and M54519FP are seven-circuit Darlington transistor arrays. The circuits are made of NPN transistors. Both
the semiconductor integrated circuits perform high-current
driving with extremely low input-current supply.
PIN CONFIGURATION
INPUT
FEATURES
High breakdown voltage (BV CEO ≥ 40V)
High-current driving (Ic(max) = 400mA)
Driving available with PMOS IC output
Wide operating temperature range (Ta = –20 to +75°C)
IN1→ 1
16 →O1
IN2→ 2
15 →O2
IN3→ 3
14 →O3
IN4→ 4
13 →O4 OUTPUT
IN5→ 5
12 →O5
IN6→ 6
11 →O6
IN7→ 7
10 →O7
GND
8
9
16P4(P)
Package type 16P2N-A(FP)
NC
NC : No connection
CIRCUIT DIAGRAM
APPLICATION
Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and MOS-bipolar logic IC interfaces
OUTPUT
INPUT
20K
20K
2K
GND
FUNCTION
The M54519P and M54519FP each have seven circuits consisting of NPN Darlington transistors. These ICs have resistance of 20kΩ between input transistor bases and input pins.
The output transistor emitters are all connected to the GND
pin (pin 8).
Collector current is 400mA maximum. Collector-emitter supply voltage is 40V maximum.
The M54519FP is enclosed in a molded small flat package,
enabling space-saving design.
ABSOLUTE MAXIMUM RATINGS
Symbol
The seven circuits share the GND.
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit : Ω
(Unless otherwise noted, Ta = –20 ~ +75 °C)
Parameter
Conditions
VCEO
Collector-emitter voltage
Output, H
IC
VI
Collector current
Input voltage
Current per circuit output, L
Pd
Topr
Power dissipation
Ta = 25°C, when mounted on board
Tstg
Operating temperature
Storage temperature
Ratings
Unit
–0.5 ~ +40
400
V
mA
–0.5 ~ +40
1.47(P)/1.00(FP)
V
W
–20 ~ +75
–55 ~ +125
°C
°C
Aug. 1999