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TK20J60UF
TK20J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK20J60U Switching Regulator Applications Unit: mm 20.5 ± 0.5 2.0 ± 0.3 1.0 +0.3 -0.25 Drain-source voltage VDSS 600 V 5.45 ± 0.2 Gate-source voltage VGSS ±30 V 5.45 ± 0.2 4.8 MAX. Unit +0.3 0.6 -0.1 Rating 1.8 MAX. Symbol Characteristics 20.0 ± 0.3 1.0 2.0 3.3 MAX. Absolute Maximum Ratings (Ta = 25°C) 9.0 2.0 Low drain-source ON-resistance: RDS (ON) = 0.165 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) 4.5 Ф3.2 ± 0.2 15.9 MAX. • • • • (Note 1) ID 20 Pulse (Note 1) IDP 40 Drain power dissipation (Tc = 25°C) PD 190 W Single pulse avalanche energy (Note 2) EAS 144 mJ Avalanche current IAR 15 A Repetitive avalanche energy (Note 3) EAR 19 mJ JEITA Channel temperature Tch 150 °C TOSHIBA Storage temperature range Tstg −55 to 150 °C Weight : 4.6 g (typ.) Note: A 1 2 3 2.8 DC Drain current 1. Gate 2. Drain (heatsink) 3. Source JEDEC ⎯ SC-65 2-16C1B Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 0.658 °C/W Thermal resistance, channel to ambient Rth (ch-a) 50 °C/W 2 Note 1: Ensure that the channel temperature does not exceed 150°C. 1 Note 2: VDD = 90 V, Tch = 25°C (initial), L = 1.12 mH, RG = 25 Ω, IAR = 15 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 3 2010-08-20
TOSHIBA
株式会社 東芝セミコンダクター&ストレージ社
日本
半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI
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