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部品型式

MT48LC16M16A2BG-75

製品説明
仕様・特性

256Mb: x4, x8, x16 SDRAM Features SDR SDRAM MT48LC64M4A2 – 16 Meg x 4 x 4 banks MT48LC32M8A2 – 8 Meg x 8 x 4 banks MT48LC16M16A2 – 4 Meg x 16 x 4 banks Features Options • PC100- and PC133-compliant • Fully synchronous; all signals registered on positive edge of system clock • Internal, pipelined operation; column address can be changed every clock cycle • Internal banks for hiding row access/precharge • Programmable burst lengths: 1, 2, 4, 8, or full page • Auto precharge, includes concurrent auto precharge and auto refresh modes • Self refresh mode (not available on AT devices) • Auto refresh – 64ms, 8192-cycle refresh (commercial and industrial) – 16ms, 8192-cycle refresh (automotive) • LVTTL-compatible inputs and outputs • Single 3.3V ±0.3V power supply • • Marking Options • Configurations – 64 Meg x 4 (16 Meg x 4 x 4 banks) – 32 Meg x 8 (8 Meg x 8 x 4 banks) – 16 Meg x 16 (4 Meg x 16 x 4 banks) • Write recovery (tWR) – tWR = 2 CLK • Plastic package – OCPL1 – 54-pin TSOP II OCPL 1 (400 mil) (standard) – 54-pin TSOP II OCPL 1 (400 mil) Pb-free • 64M4 32M8 16M16 • Notes: A2 Marking – 60-ball TFBGA (x4, x8) (8mm x 16mm) – 60-ball TFBGA (x4, x8) (8mm x 16mm) Pb-free – 54-ball VFBGA (x16) (8mm x 14 mm) – 54-ball VFBGA (x16) (8mm x 14 mm) Pb-free – 54-ball VFBGA (x16) (8mm x 8 mm) – 54-ball VFBGA (x16) (8mm x 8 mm) Pb-free Timing – cycle time – 6ns @ CL = 3 (x8, x16 only) – 7.5ns @ CL = 3 (PC133) – 7.5ns @ CL = 2 (PC133) Self refresh – Standard – Low power Operating temperature range – Commercial (0˚C to +70˚C) – Industrial (–40˚C to +85˚C) – Automotive (–40˚C to +105˚C) Revision TG 1. 2. 3. 4. FB BB FG2 BG2 F43 B43 -6A -752 -7E None L2, 4 None IT AT4 :D/:G Off-center parting line. Only available on Revision D. Only available on Revision G. Contact Micron for availability. P Table 1: Key Timing Parameters CL = CAS (READ) latency Speed Grade Clock Frequency (MHz) Target tRCD-tRP-CL -6A 167 3-3-3 18 18 18 -75 133 3-3-3 20 20 20 -7E 133 2-2-2 15 15 15 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 09/14 EN 1 tRCD (ns) tRP (ns) CL (ns) Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.

ブランド

MICRON

会社名

Micron Technology

本社国名

U.S.A

事業概要

メモリ・ストレージ用の各種半導体メモリ(DRAMやフラッシュメモリとそれらの搭載製品群)を製造・販売している。主力製品は、DRAM, FLASH MEMORY

供給状況

 
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