JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252 Plastic-Encapsulate Transistors
2SB1261
TRANSISTOR (PNP)
TO – 252
FEATURES
Low VCE(sat)
High DC Current Gain
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current
-3
A
PC
Collector Power Dissipation
1
W
Thermal Resistance From Junction To Ambient
125
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=-100µA,IE=0
-60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-1mA,IB=0
-60
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-100µA,IC=0
-7
V
Collector cut-off current
ICBO
VCB=-60V,IE=0
-10
μA
Emitter cut-off current
IEBO
VEB=-7V,IC=0
-10
μA
hFE(1)*
DC current gain
VCE=-2V, IC=-0.2A
60
*
hFE(2)
VCE=-2V, IC=-0.6A
100
VCE=-2V, IC=-2A
50
hFE(3)*
400
Collector-emitter saturation voltage
VCE(sat)
*
IC=-1.5A,IB=-0.15A
-0.3
V
Base-emitter saturation voltage
*
VBE(sat)
IC=-1.5A,IB=-0.15A
-1.2
V
Cob
Collector output capacitance
fT
Transition frequency
VCB=-10V,IE=0, f=1MHz
40
pF
VCE=-5V,IC=-1.5A
50
MHz
*Pulse test: pulse width ≤350μs, duty cycle≤ 2.0%.
CLASSIFICATION OF hFE(2)
RANK
M
L
K
RANGE
100-200
160-320
200-400
A,Dec,2010