MOTOROLA
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by MRF176GU/D
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power
Field-Effect Transistors
N–Channel Enhancement–Mode
Designed for broadband commercial and military applications using push pull
circuits at frequencies to 500 MHz. The high power, high gain and broadband
performance of these devices makes possible solid state transmitters for FM
broadcast or TV channel frequency bands.
LIFETIME BUY
• Electrical Performance
MRF176GU @ 50 V, 400 MHz (“U” Suffix)
Output Power — 150 Watts
Power Gain — 14 dB Typ
Efficiency — 50% Typ
MRF176GV @ 50 V, 225 MHz (“V” Suffix)
Output Power — 200 Watts
Power Gain — 17 dB Typ
Efficiency — 55% Typ
• 100% Ruggedness Tested At Rated Output Power
LAST SHIP 06/07/00
MRF176GU
MRF176GV
200/150 W, 50 V, 500 MHz
N–CHANNEL MOS
BROADBAND
RF POWER FETs
D
G
S
(FLANGE)
G
• Low Thermal Resistance
• Low Crss — 7.0 pF Typ @ VDS = 50 V
D
CASE 375–04, STYLE 2
Symbol
Value
Unit
Drain–Source Voltage
Rating
VDSS
125
Vdc
Gate–Source Voltage
VGS
± 40
Vdc
Drain Current — Continuous
ID
16
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
400
2.27
Watts
W/°C
Storage Temperature Range
Tstg
– 65 to +150
°C
TJ
200
°C
Symbol
Max
Unit
RθJC
0.44
°C/W
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
125
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 50 V, VGS = 0)
IDSS
—
—
2.5
mAdc
Gate–Body Leakage Current
(VGS = 20 V, VDS = 0)
IGSS
—
—
1.0
µAdc
OFF CHARACTERISTICS (1)
Drain–Source Breakdown Voltage
(VGS = 0, ID = 100 mA)
NOTE:
1. Each side of device measured separately.
REV 9
©MOTOROLA RF DEVICE DATA
Motorola, Inc. 1998
MRF176GU MRF176GV
1
LAST ORDER 06/01/00
MAXIMUM RATINGS