Features
• Single 2.7V to 3.6V Supply
• Hardware and Software Data Protection
• Low Power Dissipation
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– 15 mA Active Current
– 20 µA CMOS Standby Current
Fast Read Access Time – 200 ns
Automatic Page Write Operation
– Internal Address and Data Latches for 64 Bytes
– Internal Control Timer
Fast Write Cycle Times
– Page Write Cycle Time: 10 ms Maximum
– 1 to 64 Byte Page Write Operation
DATA Polling for End of Write Detection
High-reliability CMOS Technology
– Endurance: 100,000 Cycles
– Data Retention: 10 Years
JEDEC Approved Byte-wide Pinout
Commercial and Industrial Temperature Ranges
Green (Pb/Halide-free) Packaging Option
64K (8K x 8)
Battery-Voltage
Parallel
EEPROM
with Page Write
and Software
Data Protection
1. Description
The AT28BV64B is a high-performance electrically erasable programmable read onlymemory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers
access times to 200 ns with power dissipation of just 54 mW. When the device is
deselected, the CMOS standby current is less than 20 µA.
AT28BV64B
The AT28BV64B is accessed like a static RAM for the read or write cycle without the
need for external components. The device contains a 64 byte page register to allow
writing of up to 64 bytes simultaneously. During a write cycle, the addresses and 1 to
64 bytes of data are internally latched, freeing the address and data bus for other
operations. Following the initiation of a write cycle, the device will automatically write
the latched data using an internal control timer. The end of a write cycle can be
detected by DATA polling of I/O7. Once the end of a write cycle has been detected a
new access for a read or write can begin.
Atmel’s AT28BV64B has additional features to ensure high quality and manufacturability. A software data protection mechanism guards against inadvertent writes. The
device also includes an extra 64 bytes of EEPROM for device identification or
tracking.
0299G–PEEPR–04/05
