FDS9953A
Dual 30V P-Channel PowerTrench® MOSFET
General Description
Features
This P
-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gave drive
voltage ratings (4.5V – 25V).
• –2.9 A, –30 V
Applications
• Fast switching speed
•
Power management
•
Load switch
• High performance trench technology for extremely
low RDS(ON)
•
Battery protection
• Low gate charge (2.5nC typical)
• High power and current handling capability
DD1
D1
D
D2
D
RDS(ON) = 130 mΩ @ V GS = –10 V
RDS(ON) = 200 mΩ @ V GS = –4.5 V
5
D2
D
6
4
Q1
3
7
SO-8
Pin 1 SO-8
G1
S1 G
G2 S
S2 S
8
1
S
Absolute Maximum Ratings
Symbol
2
Q2
TA=25oC unless otherwise noted
Ratings
Units
V DSS
Drain-Source Voltage
–30
V
V GSS
Gate-Source Voltage
±25
V
Drain Current
±2.9
A
ID
Parameter
– Continuous
(Note 1a)
±10
– Pulsed
PD
Power Dissipation for Dual Operation
2
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
1
(Note 1c)
TJ , TSTG
W
1.6
0.9
–55 to +150
°C
(Note 1a)
78
°C/W
(Note 1)
40
°C/W
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJ C
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS9953A
FDS9953A
13’’
12mm
2500 units
©2001 Fairchild Semiconductor Corporation
FDS9953A Rev B(W)
FDS9953A
May 2001
