5 Volt Intel StrataFlash® Memory
28F320J5 and 28F640J5 (x8/x16)
Datasheet
Product Features
s
s
s
s
s
High-Density Symmetrically-Blocked
Architecture
— 64 128-Kbyte Erase Blocks (64 M)
— 32 128-Kbyte Erase Blocks (32 M)
4.5 V–5.5 V VCC Operation
— 2.7 V–3.6 V and 4.5 V–5.5 V I/O
Capable
120 ns Read Access Time (32 M)
150 ns Read Access Time (64 M)
Enhanced Data Protection Features
— Absolute Protection with
VPEN = GND
— Flexible Block Locking
— Block Erase/Program Lockout during
Power Transitions
Industry-Standard Packaging
— SSOP Package (32, 64 M)
TSOP Package (32 M)
s
s
s
s
s
s
Cross-Compatible Command Support
— Intel Basic Command Set
— Common Flash Interface
— Scalable Command Set
32-Byte Write Buffer
— 6 µs per Byte Effective Programming
Time
6,400,000 Total Erase Cycles (64 M)
3,200,000 Total Erase Cycles (32 M)
— 100,000 Erase Cycles per Block
Automation Suspend Options
— Block Erase Suspend to Read
— Block Erase Suspend to Program
System Performance Enhancements
— STS Status Output
Operating Temperature –20 °C to + 85 °C
(–40 °C to +85 °C on .25 micron ETOX VI)
process technology parts)
Capitalizing on two-bit-per-cell technology, 5 Volt Intel StrataFlash® memory products provide 2X the bits
in 1X the space. Offered in 64-Mbit (8-Mbyte) and 32-Mbit (4-Mbyte) densities, Intel StrataFlash memory
devices are the first to bring reliable, two-bit-per-cell storage technology to the flash market.
Intel StrataFlash memory benefits include: more density in less space, lowest cost-per-bit NOR devices,
support for code and data storage, and easy migration to future devices.
Using the same NOR-based ETOX™ technology as Intel’s one-bit-per-cell products, Intel StrataFlash
memory devices take advantage of 400 million units of manufacturing experience since 1988. As a result,
Intel StrataFlash components are ideal for code or data applications where high density and low cost are
required. Examples include networking, telecommunications, audio recording, and digital imaging.
Intel StrataFlash memory components deliver a new generation of forward-compatible software support.
By using the Common Flash Interface (CFI) and the Scalable Command Set (SCS), customers can take
advantage of density upgrades and optimized write capabilities of future Intel StrataFlash memory devices.
Manufactured on Intel’s 0.4 micron ETOX™ V process technology and Intel’s 0.25 micron ETOX VI
process technology, 5 Volt Intel StrataFlash memory provides the highest levels of quality and reliability.
Notice: This document contains information on products in production. The specifications are
subject to change without notice. Verify with your local Intel sales office that you have the latest
datasheet before finalizing a design.
Order Number: 290606-015
April 2002
