RN1421∼RN1427
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN1421, RN1422, RN1423, RN1424
RN1425, RN1426, RN1427
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Unit: mm
High current type (IC (max) = 800mA)
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Low VCE (sat)
Complementary to RN2421 to RN2427
Equivalent Circuit and Bias Resister Values
Type No.
R1 (kΩ)
R2 (kΩ)
RN1421
1
1
RN1422
2.2
2.2
RN1423
4.7
4.7
S-Mini
RN1424
10
10
JEDEC
RN1425
0.47
10
RN1426
1
10
RN1427
2.2
10
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 12 mg (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Symbol
RN1421 to 1427
Rating
Unit
VCBO
50
V
VCEO
50
V
RN1421 to 1424
Emitter-base voltage
RN1425, 1426
10
VEBO
5
RN1427
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
V
6
IC
RN1421 to 1427
800
mA
PC
200
mW
Tj
150
°C
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
1988-03
1
2014-03-01