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RN1603

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RN1601~RN1606 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1601, RN1602, RN1603 RN1604, RN1605, RN1606 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Including two devices in SM6 (super-mini-type with six (6) leads) With built-in bias resistors Simplified circuit design Reduced number of parts and manufacturing process Complementary to RN2601~RN2606 Equivalent Circuit and Bias Resistor Values Type No. R1 (kΩ) R2 (kΩ) RN1601 4.7 4.7 RN1602 10 10 RN1603 22 22 RN1604 47 47 RN1605 2.2 47 RN1606 4.7 47 JEDEC ― JEITA ― TOSHIBA 2-3N1A Weight: 0.015 g (typ.) Equivalent Circuit Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Symbol RN1601~1606 RN1601~1604 RN1605, 1606 Collector current Collector power dissipation Junction temperature Storage temperature range (Top View) Rating Unit VCBO 50 V VCEO 50 V 10 VEBO 5 V IC RN1601~1606 100 mA PC* 300 mW Tj 150 °C Tstg −55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * Total rating 1 2007-11-01

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