RN1601~RN1606
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process)
RN1601, RN1602, RN1603
RN1604, RN1605, RN1606
Unit: mm
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Including two devices in SM6 (super-mini-type with six (6) leads)
With built-in bias resistors
Simplified circuit design
Reduced number of parts and manufacturing process
Complementary to RN2601~RN2606
Equivalent Circuit and Bias Resistor Values
Type No.
R1 (kΩ)
R2 (kΩ)
RN1601
4.7
4.7
RN1602
10
10
RN1603
22
22
RN1604
47
47
RN1605
2.2
47
RN1606
4.7
47
JEDEC
―
JEITA
―
TOSHIBA
2-3N1A
Weight: 0.015 g (typ.)
Equivalent Circuit
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
RN1601~1606
RN1601~1604
RN1605, 1606
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
(Top View)
Rating
Unit
VCBO
50
V
VCEO
50
V
10
VEBO
5
V
IC
RN1601~1606
100
mA
PC*
300
mW
Tj
150
°C
Tstg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*
Total rating
1
2007-11-01