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KIA7805A
PD – 91746C IRF7805/IRF7805A HEXFET® Chip-Set for DC-DC Converters • • • • N Channel Application Specific MOSFETs Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses A D 1 8 S 2 7 D S 3 6 D G 4 5 D S Description These new devices employ advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make them ideal for high efficiency DC-DC Converters that power the latest generation of mobile microprocessors. The IRF7805/IRF7805A offers maximum efficiency for mobile CPU core DC-DC converters. SO-8 T o p V ie w Device Features IRF7805 IRF7805A Vds 30V 30V Rds(on) 11mΩ 11mΩ Qg 31nC 31nC Qsw 11.5nC Qoss 36nC 36nC Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage Gate-Source Voltage IRF7805A 30 V Current (VGS ≥ 4.5V) ID 13 10 10 IDM 25°C 100 100 70°C Pulsed Drain Current 25°C 13 2.5 PD 70°C Junction & Storage Temperature Range Units ±12 VGS Continuous Drain or Source Power Dissipation IRF7805 VDS A W 1.6 TJ, TSTG –55 to 150 °C Continuous Source Current (Body Diode) IS 2.5 2.5 Pulsed source Current ISM 106 106 Thermal Resistance Parameter Maximum Junction-to-Ambient www.irf.com RθJA Max. 50 A Units °C/W 1 10/10/00
SAMSUNG
Samsung Electronics Co., Ltd
韓国
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