Advance Technical Information
IXTH 50N30
IXTT 50N30
High Current
Power MOSFET
VDSS
ID25
= 300 V
= 50 A
Ω
= 65 mΩ
RDS(on)
N-Channel Enhancement Mode
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
300
300
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
TC = 25°C
50
A
IDM
TC = 25°C, pulse width limited by TJM
200
A
IAR
TC = 25°C
50
A
EAR
TC = 25°C
50
mJ
EAS
TC = 25°C
1.5
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
5
V/ns
400
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
°C
TO-247 (IXTH)
(TAB)
TO-268 (IXTT)
G
S
D (TAB)
TJ ≤ 150°C, RG = 2 Ω
PD
TC = 25°C
TJ
TJM
Tstg
TL
1.6 mm (0.062 in.) from case for 10 s
Md
Mounting torque (TO-247)
Weight
TO-247
TO-268
1.13/10 Nm/lb.in.
6
5
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
g
g
Characteristic Values
Min. Typ.
Max.
VDSS
VGS = 0 V, ID = 250 µA
300
VGS(th)
V DS = VGS, ID = 250µA
2.0
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
V
4.0
V
±100
nA
TJ = 25°C
TJ = 125°C
25
250
65
D = Drain
TAB = Drain
Features
International standard packages
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
High power density
µA
µA
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
G = Gate
S = Source
mΩ
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DS99011A(08/03)
