2SK208
TOSHIBA Field Effect Transistor
Silicon N Channel Junction Type
2SK208
General Purpose and Impedance Converter and
Condenser Microphone Applications
•
Unit: mm
High breakdown voltage: VGDS = −50 V
•
High input impedance: IGSS = −1.0 nA (max) (VGS = −30 V)
•
Low noise: NF = 0.5dB (typ.) (RG = 100 kΩ, f = 120 Hz)
•
Small package.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Gate-drain voltage
Symbol
Rating
Unit
VGDS
−50
V
Gate current
IG
10
mA
Drain power dissipation
PD
100
mW
Junction temperature
Tj
125
°C
Tstg
−55~125
°C
Storage temperature range
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1B
Weight: 0.012 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Symbol
Test Condition
Min
Typ.
Max
Unit
IGSS
VGS = −30 V, VDS = 0
⎯
⎯
−1.0
nA
V (BR) GDS
VDS = 0, IG = −100 μA
−50
⎯
⎯
V
VDS = 10 V, VGS = 0
0.3
⎯
6.5
mA
VDS = 10 V, ID = 0.1 μA
−0.4
⎯
−5.0
V
VDS = 10 V, VGS = 0, f = 1 kHz
1.2
⎯
⎯
mS
IDSS
(Note)
Gate-source cut-off voltage
VGS (OFF)
Forward transfer admittance
⎪Yfs⎪
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
⎯
8.2
⎯
pF
Reverse transfer capacitance
Crss
VGD = −10 V, ID = 0, f = 1 MHz
⎯
2.6
⎯
pF
Noise figure
NF
⎯
0.5
⎯
dB
Note: IDSS classification
VDS = 15 V, VGS = 0
RG = 100 kΩ, f = 120 Hz
R: 0.30~0.75 mA, O: 0.60~1.40 mA, Y: 1.2~3.0 mA, GR: 2.6~6.5 mA
Marking
1
2007-11-01
