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SI4410BDY-T1-E3
Si4410BDY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0135 at VGS = 10 V 10 0.020 at VGS = 4.5 V 30 ID (A) 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Battery Switch • Load Switch SO-8 D S 1 8 D S 2 7 D S 3 6 D 5 D G 4 G Top View S Ordering Information: Si4410BDY-T1-E3 (Lead (Pb)-free) Si4410BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Continuous Source Current (Diode Conduction)a IS TA = 25 °C TA = 70 °C PD 7.5 8 6 50 2.3 2.5 1.4 1.6 0.9 A 1.26 TJ, Tstg Operating Junction and Storage Temperature Range V 10 IDM Pulsed Drain Current (10 µs Pulse Width) Maximum Power Dissipationa ID Unit - 55 to 150 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t ≤ 10 s Steady State Steady State RthJA RthJF Typical Maximum 40 50 70 90 25 Unit 30 °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. Document Number: 72211 S09-0705-Rev. D, 27-Apr-09 www.vishay.com 1
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