RT2N09M
COMPOSITE TRANSISTOR WITH RESISTOR
FOR SWITCHING APPLICATION
SILICON NPN EPITAXIAL TYPE
OUTLINE DRAWING
DESCRIPTION
Unit:mm
2.1
RT2N09M is a composite transistor with built-in bias resistor
1.25
0.2
FEATURE
●Built-in bias resistor ( R1=2.2 KΩ , R2=47KΩ )
①
⑤
0.65
2.0
●Mini package for easy mounting
0.65
②
APPLICATION
④
③
0.13
0∼0.1
0.65
0.9
Inverted circuit , switching circuit , interface circuit , driver circuit
⑤
④
RTr2
RTr1
R1
R2
①
MAXIMUM RATINGS
Symbol
R2
②
R1
③
TERMINAL CONNECTOR
①
:BASE1
②
:EMITTER
(COMMON
)
③
:BASE2
④
:COLLECTOR2
⑤
:COLLECTOR1
JEITA:−
JEDEC
:−
(Ta=25℃ (
)RTr1、RTr2
)
Parameter
Ratings
Unit
VCBO
Collector to Base voltage
50
VEBO
Emitter to Base voltage
6
Collector to Emitter voltage
50
V
IC
Collector current
100
mA
I CM
Peak Collector current
200
Collector dissipation
(Total Ta=25℃
)
150
mW
Tj
Junction temperature
+150
℃
Tstg
Storage temperature
-55∼+150
℃
④
mA
PC
⑤
V
VCEO
MARKING
V
ISAHAYA ELECTRONICS CORPORATION
N D
①
② ③